Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
نویسندگان
چکیده
منابع مشابه
6 nm half - pitch lines and 0 . 04 μ m 2 static random access memory patterns by nanoimprint lithography
A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated the fabrication of 6 nm half-pitch gratings and 0.04 μm2 cell area SRAM metal interconnects with 20 nm line half-pitch in resist by NIL. The mould for the 6 nm half-pitch grating was fabricated by cle...
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In this paper, we propose a new time-shared twin memristor crossbar for pattern-recognition applications. By sharing two memristor arrays at different time, the number of memristor arrays can be reduced by half, saving the crossbar area by half, too. To implement the time-shared twin memristor crossbar, we also propose CMOS time-shared subtractor circuit, in this paper. The operation of the tim...
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Emerging nano-scale technologies are pushing the fabrication boundaries at their limits, for leveraging an even higher density of nano-devices towards reaching 4F(2)/cell footprint in 3D arrays. Here, we study the liftoff process limits to achieve extreme dense nanowires while ensuring preservation of thin film quality. The proposed method is optimized for attaining a multiple layer fabrication...
متن کاملSelf-formation of sub-60-nm half-pitch gratings with large areas through fracturing.
Periodic micro- and nanostructures (gratings) have many significant applications in electronic, optical, magnetic, chemical and biological devices and materials. Traditional methods for fabricating gratings by writing with electrons, ions or a mechanical tip are limited to very small areas and suffer from extremely low throughput. Interference lithography can achieve relatively large fabricatio...
متن کاملUsing high-contrast salty development of hydrogen silsesquioxane for sub-10-nm half-pitch lithography
When used as a negative-tone electron-beam resist, hydrogen silsesquioxane HSQ is typically developed in an aqueous alkali solution such as tetramethyl ammonium hydroxide. This development process results in low contrast. In this work, the authors instead used a mixture of salt and alkali to significantly increase the contrast of HSQ. Contrast values as high as 10 in a 115-nm-thick resist were ...
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ژورنال
عنوان ژورنال: Nature Nanotechnology
سال: 2018
ISSN: 1748-3387,1748-3395
DOI: 10.1038/s41565-018-0302-0